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Toda, Naohiro*; Katayama, Yoshinori; Tsuji, Kazuhiko*
Review of High Pressure Science and Technology, 7, p.647 - 649, 1998/03
The electrical conductivity has been measured at pressures to 8 GPa and temperatures of 77-300K in evaporated amorphous Ge (a-Ge), a-Ge-Cu alloys and a-Ge-Al alloys. The dependence of is well described by a power lw at low temperatures below 150 K, which is expemcted from a multi-phonon tunneling transition process model with weak electron-lattice coupling, rather than the Mott's variable range hopping conduction model. The exponent in the power law changes with increasing pressure. For both a-GeCu and a-GeAl alloys, d(ln )/d show positive values in the low pressure region and negative values in the high pressure region. Results are discussed from several hopping conduction models.
Kuriyama, Kazuo*; Kazama, K.*; Kato, Takashi*; Yamamoto, Shunya; Aoki, Yasushi; Naramoto, Hiroshi
Journal of Applied Physics, 80(8), p.4488 - 4490, 1996/10
Times Cited Count:1 Percentile:8.28(Physics, Applied)no abstracts in English